Novel Method for Electroless Etching of 6H–SiC

Electroless etching of Si with IO3– and related species

We have previously derived seven requirements for the formulation of effective stain etchants and have demonstrated that Fe3+, Ce4+, and VO2+ + HF solutions are highly effective at producing nanocrystalline porous silicon. Here, we show that Cl2, Br2, I2, ClO3-, BrO3-, IO3-, I-, and I3- induce etching of silicon when added to HF. However, using the strict definition that a pore is deeper than i...

Charge Transfer and Nanostructure Formation During Electroless Etching of Silicon

Area Effect of Reflectance in Silicon ‎Nanowires Grown by Electroless Etching

This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...

A novel planarization method based on photoinduced confined chemical etching.

A photoinduced confined chemical etching system based on TiO2 nanotube arrays is developed for the planarization of the copper surface, which is proved to be a prospective stress-free chemical planarization method for metals and semiconductors.

Novel Electroless Plating of Ruthenium for Fabrication of Palladium-Ruthenium Composite Membrane on PSS Substrate and Its Characterization

This paper focused on a novel method of electroless plating ruthenium (Ru) on solid or porous substrates like porous stainless steel (PSS) discs or ceramic tubes. A novel complexing plating bath of Ru was developed. It is proven that Ru can be deposited directly on these substrates by the bath at a temperature of 328 K and strong alkaline environment. TGA, SEM, EDX and XRD confirmed the success...